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EM/R20 Double Trench Chip Data Sheet

Features

SIPOS & Glass Passivation Junction & LTO
Crystal Method: CZ / FZ
Double Trench
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Compatible With Soldering
Surface Metalization:Ni or Ni/Au
Ni TypicalThickness：0.4um
Au TypicalThickness：0.01um

Chip size	A （ +1/-2 ）（ mil ）	B （ +1/-2 ）（ mil ）	C （ ±10 ） (um)
180*180mil	180	128	340
200*200mil	200	148	340
215*215mil	215	163	340
260*260mil	260	210	340
280*280mil	280	230	340
300*300mil	300	250	340
320*320mil	320	270	340
350*350mil	350	300	340
395*395mil	395	335	340
420*420mil	420	360	340
480*480mil	480	420	340
500*500mil	500	440	340

Electrical Characteristics (TA=25℃)

Parameter	Symbol	VALUE	UNIT
Maximum repetitive peak reverse voltage	V_RRM	1600~2000	V
Maximum RMS voltage	V_RMS	1280~1600	V
Maximum DC blocking voltage	V_DC	1600~2000	V
Maximum average forward rectified current	I_F(AV)	See Next Table	A
Maximum instantaneous forwad voltage at IF	V_F	See Next Table	V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load	I_FSM	See Next Table	A
Maximum DC reverse current at rated DC blocking voltage	I_R	See Next Table	uA
Maximum reverse recovery time.Test conditions:IF=0.5A, IR=1A, IRR=0.25A.	Trr	See Next Table	ns
Operating tempeterature range	T_j	-55～150	℃

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