SF Chip Data Sheet
Features
- Glass Passivation Junction
- Low Forward Voltage Drop
- High Current Capability
- High Reliability
- High Surge Current Capability
- Compatible With Soldering
- Surface Metalization:Ni or Ni/Au
Ni TypicalThickness：0.4um
Au TypicalThickness：0.01um
Dimensions
|
Chip size |
A （+1/-2）（mil） |
B（+1/-2）（mil） |
C（±10）（um） |
|
42*42mil |
42 |
26 |
210 |
|
46*46mil |
46 |
28 |
210 |
|
50*50mil |
50 |
32 |
210 |
|
60*60mil |
60 |
42 |
210 |
|
84*84mil |
84 |
65 |
210 |
|
95*95mil |
95 |
76 |
210 |
|
110*110mil |
110 |
90 |
210 |
|
130*130mil |
130 |
110 |
210 |
|
165*165mil |
165 |
137 |
210 |
|
190*190mil |
190 |
167 |
210 |
|
200*200mil |
200 |
176 |
210 |
|
220*220mil |
220 |
196 |
210 |
Electrical Characteristics (TA=25℃)
|
Parameter |
Symbol |
VALUE |
UNIT |
|
|
Maximum repetitive peak reverse voltage |
VRRM |
200~1000 |
V |
|
|
Maximum RMS voltage |
VRMS |
160~800 |
V |
|
|
Maximum DC blocking voltage |
VDC |
200~1000 |
V |
|
|
Maximum average forward rectified current |
IF(AV) |
See Next Table |
A |
|
|
Maximum instantaneous forwad voltage at IF |
VF |
See Next Table |
V |
|
|
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
See Next Table |
A |
|
|
Maximum DC reverse current at rated DC blocking voltage |
TA=25℃ |
IR/ HTIR |
See Next Table |
uA |
|
TA=125℃ |
||||
|
Maximum reverse recovery time. Test conditions:IF=0.5A, IR=1A, IRR=0.25A. |
Trr |
See Next Table |
ns |
|
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