FR Chip Data Sheet

Features
- Glass Passivation Junction
- Low Forward Voltage Drop
- High Current Capability
- High Reliability
- High Surge Current Capability
- Compatible With Soldering
- Surface Metalization:Ni or Ni/Au
Ni TypicalThickness:0.4um
Au TypicalThickness:0.01um
Dimensions
Chip size |
A (+1/-2)(mil) |
B(+1/-2)(mil) |
C(±10)(um) |
42*42mil |
42 |
26 |
250 |
46*46mil |
46 |
28 |
250 |
50*50mil |
50 |
32 |
250 |
60*60mil |
60 |
42 |
250 |
84*84mil |
84 |
65 |
250 |
95*95mil |
95 |
76 |
250 |
110*110mil |
110 |
92 |
250 |
Electrical Characteristics (TA=25℃)
Parameter |
Symbol |
VALUE |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
400~1000 |
V |
Maximum RMS voltage |
VRMS |
300~800 |
V |
Maximum DC blocking voltage |
VDC |
400~1000 |
V |
Maximum average forward rectified current |
IF(AV) |
See Next Table |
A |
Maximum instantaneous forwad voltage at IF |
VF |
See Next Table |
V |
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
See Next Table |
A |
Maximum DC reverse currentat rated DC blocking voltage |
IR |
See Next Table |
uA |
Maximum reverse recovery time. Test conditions:IF=0.5A, IR=1A, IRR=0.25A. |
Trr |
See Next Table |
ns |
Operating tempeterature range |
Tj |
-55~150 |
℃ |
Message
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Contact Us
Telephone:0571-86698096
Address: Liming Community, Heshun Village, Jingjiang Street, Xiaoshan District, Hangzhou City, Zhejiang Province
E-mail:sales@hzhangxin.com

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