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STD Chip Data Sheet

Features

Glass Passivation Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Compatible With Soldering
Surface Metalization:Ni or Ni/Au

Ni TypicalThickness：0.4um
Au TypicalThickness：0.01um

Dimensions

Chip size	A （+1/-2）（mil）	B（+1/-2）（mil）	C（±10）(um)
42*42mil	42	26	260
46*46mil	46	28	260
50*50mil	50	32	260
60*60mil	60	42	260
84*84mil	84	65	260
95*95mil	95	76	260
110*110mil	110	90	260
130*130mil	130	110	260
160*160mil	160	130	260
180*180mil	180	150	260

Electrical Characteristics (TA=25℃)

Parameter	Symbol	VALUE	UNIT
Maximum repetitive peak reverse voltage	V_RRM	200~1000	V
Maximum RMS voltage	V_RMS	160~800	V
Maximum DC blocking voltage	V_DC	200~1000	V
Maximum average forward rectified current	I_F(AV)	See Next Table	A
Maximum instantaneous forwad voltage at IF	V_F	See Next Table	V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load	I_FSM	See Next Table	A
Maximum DC reverse current at rated DC blocking voltage	I_R	See Next Table	uA
Maximum reverse recovery time. Test conditions:IF=0.5A, IR=1A, IRR=0.25A.	Trr	See Next Table	ns
Operating tempeterature range	T_j	-55～150	℃

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