STD-W Chip Data Sheet
Features
- SIPOS & Glass Passivation Junction & LTO
- Crystal Method: CZ / FZ
- Low Forward Voltage Drop
- High Current Capability
- High Reliability
- High Surge Current Capability
- Compatible With Soldering
- Surface Metalization:Ni or Ni/Au
Ni TypicalThickness：0.4um
Au TypicalThickness：0.01um
Dimensions
|
Chip size |
A （+1/-2）（mil） |
B（+1/-2）（mil） |
C（±10） |
|
Square |
|
|
|
|
380*380mil |
380 |
346 |
250 |
|
480*480mil |
480 |
446 |
250 |
|
Hexagon |
|
|
|
|
380*380*380mil |
380 |
346 |
250 |
Electrical Characteristics (TA=25℃)
|
Parameter |
Symbol |
VALUE |
UNIT |
|
Maximum repetitive peak reverse voltage |
VRRM |
200~1000 |
V |
|
Maximum RMS voltage |
VRMS |
160~800 |
V |
|
Maximum DC blocking voltage |
VDC |
200~1000 |
V |
|
Maximum average forward rectified current |
IF(AV) |
See Next Table |
A |
|
Maximum instantaneous forwad voltage at IF |
VF |
See Next Table |
V |
|
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
See Next Table |
A |
|
Maximum DC reverse current at rated DC blocking voltage |
IR |
See Next Table |
uA |
|
Maximum reverse recovery time. Test conditions:IF=0.5A, IR=1A, IRR=0.25A. |
Trr |
See Next Table |
ns |
|
Operating tempeterature range |
Tj |
-55～150 |
℃ |
Message
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Contact Us
Telephone:0571-86698096
Address: Liming Community, Heshun Village, Jingjiang Street, Xiaoshan District, Hangzhou City, Zhejiang Province
E-mail:sales@hzhangxin.com
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