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2025
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04
The working principle of a rectifier diode
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Rectifier diodes utilize the unidirectional conductivity of semiconductors. In a diode, a P-type semiconductor and an N-type semiconductor form a PN junction. When a forward voltage is applied across the diode, i.e., the P-region is connected to the positive and the N-region is connected to the negative, the PN junction narrows, and current can flow smoothly. At this time, the diode is in the conducting state. When a reverse voltage is applied, the PN junction widens, and only a very small reverse leakage current flows, and the diode is in the cutoff state. In this way, through the unidirectional conductivity of the rectifier diode, the negative half-cycle of the alternating current can be cut off, allowing only the positive half-cycle to pass, thereby achieving the rectification function.
Working Principle
Characteristic Parameters
- Maximum Rectification Current This refers to the maximum average forward current that the diode can continuously conduct during long-term operation. This is an important parameter; exceeding this value may cause the diode to overheat or even be damaged. For example, the maximum rectification current of a 1N4007 rectifier diode is 1A.
- Reverse Breakdown Voltage This refers to the maximum reverse voltage that the diode can withstand. If the reverse voltage exceeds this value, the diode may be broken down and lose its unidirectional conductivity. For example, the reverse breakdown voltage of a 1N4007 is 1000V.
- Reverse Recovery Time When switching from the forward conduction state to the reverse cutoff state, the diode requires a certain amount of time to restore its cutoff characteristics; this time is the reverse recovery time. It affects the diode's performance in high-frequency circuits; the shorter the reverse recovery time, the better the diode's high-frequency performance.
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